A compact quantum correction model for symmetric double gate metal-oxide- semiconductor field-effect transistor

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors Appl. Physical origin and characteristics of gate capacitance in silicon metal-oxide-semiconductor field-effect transistors J. A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (DV TH QM) and the gate capaci-tance (C g) degradation. First of all, DV TH QM induced by quantum mechanical (QM) effects is mod-eled. The C g degradation is then modeled by introducing the inversion layer centroid. With DV TH QM and the C g degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET. V C 2014 AIP Publishing LLC.